English
Language : 

BUH150G Datasheet, PDF (8/10 Pages) ON Semiconductor – SWITCHMODE NPN Silicon Planar Power Transistor
◁
BUH150G
TYPICAL SWITCHING CHARACTERISTICS
VCE
dyn 1 ms
0V
dyn 3 ms
90% IB
1 ms
IB
3 ms
TIME
Figure 19. Dynamic Saturation Voltage
Measurements
10
9
IC
8
7
tsi
6
5
Vclamp 10% Vclamp
4
3
IB
90% IB1
2
1
0
0
1
2
3
4
TIME
90% IC
tfi
10% IC
tc
5
6
7
8
Figure 20. Inductive Switching Measurements
Table 1. Inductive Load Switching Drive Circuit
+15 V
1 mF
150 W
100 W
3W
3W
+10 V
MPF930
MPF930
MTP8P10
100 mF
MTP8P10
MUR105
RB1
Iout
A
VCE
IB1
IB
50
W
COMMON
500 mF
-Voff
MJE210
RB2
150 W
3W
MTP12N10
1 mF
V(BR)CEO(sus)
L = 10 mH
RB2 = ∞
VCC = 20 Volts
IC(pk) = 100 mA
VCE PEAK
IC PEAK
IB2
Inductive Switching
L = 200 mH
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired IB1
RBSOA
L = 500 mH
RB2 = 0
VCC = 15 Volts
RB1 selected for
desired IB1
http://onsemi.com
8
 ▷