BUH150G Datasheet, PDF (4/10 Pages) ON Semiconductor – SWITCHMODE NPN Silicon Planar Power Transistor

BUH150G
TYPICAL STATIC CHARACTERISTICS
100
T_J = 125°C
100
V_CE = 1 V
T_J = 125°C
V_CE = 3 V
T_J = - 20°C
10
T_J = 25°C
T_J = - 20°C
10
T_J = 25°C
1
0.001
0.01
0.1
1
10
100
I_C, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ 1 Volt
1
0.001
0.01
0.1
1
10
100
I_C, COLLECTOR CURRENT (AMPS)
Figure 2. DC Current Gain @ 3 Volt
100
T_J = 125°C
T_J = - 20°C
10
T_J = 25°C
V_CE = 5 V
10
I_C/I_B = 5
1
0.1
T_J = 25°C
T_J = - 20°C
T_J = 125°C
1
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (AMPS)
0.01
100
0.001
0.01
0.1
1
10
100
I_C, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain @ 5 Volt
Figure 4. Collector−Emitter Saturation Voltage
10
I_C/I_B = 10
1
T_J = 125°C
0.1
T_J = 25°C
0.01
0.001
0.01
0.1
1
10
100
I_C, COLLECTOR CURRENT (AMPS)
Figure 5. Collector−Emitter Saturation Voltage
1.5
I_C/I_B = 5
1
T_J = - 20°C
0.5
T_J = 25°C
T_J = 125°C
0
0.001
0.01
0.1
1
10
100
I_C, COLLECTOR CURRENT (AMPS)
Figure 6. Base−Emitter Saturation Region
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