BUH150G Datasheet, PDF (5/10 Pages) ON Semiconductor – SWITCHMODE NPN Silicon Planar Power Transistor

BUH150G
TYPICAL STATIC CHARACTERISTICS
1.5
I_C/I_B = 10
1
T_J = - 20°C
T_J = 25°C
0.5
T_J = 125°C
0
0.001
0.01
0.1
1
10
100
I_C, COLLECTOR CURRENT (AMPS)
Figure 7. Base−Emitter Saturation Region
2
T_J = 25°C
1.5
1
20 A
0.5
V_CE(sat)
15 A
(I_C = 1 A)
10 A
8A
5A
0
0.01
0.1
1
10
100
I_B, BASE CURRENT (A)
Figure 8. Collector Saturation Region
10000
1000
C_ib (pF)
900
T_J = 25°C
f_(test) = 1 MHz
800
700
BVCER @ 10 mA
T_J = 25°C
BVCER(sus) @ 200 mA
600
100
C_ob (pF)
500
10
400
1
10
100
10
V_R, REVERSE VOLTAGE (VOLTS)
100
1000
R_BE (W)
Figure 9. Capacitance
Figure 10. Resistive Breakdown
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