BUH150G Datasheet, PDF (7/10 Pages) ON Semiconductor – SWITCHMODE NPN Silicon Planar Power Transistor

BUH150G
TYPICAL SWITCHING CHARACTERISTICS
5
4
I_C = 5 A
3
2
I_B1 = I_B2
1 ^VCC ^{= 15 V}
V_Z = 300 V
L_C = 200 mH
0
2
4
I_C = 10 A
6
h_FE, FORCED GAIN
T_J = 125°C
T_J = 25°C
8
10
Figure 16. Inductive Storage Time
200
T_J = 125°C
T_J = 25°C
150
100
50 _{IC = 10 A}
0
3
4
I_C = 5 A
I_Boff = I_B2
V_CC = 15 V
V_Z = 300 V
L_C = 200 mH
5
6
7
8
h_FE, FORCED GAIN
9
10
Figure 17. Inductive Fall Time
800
I_B1 = I_B2
700 _{VCC = 15 V}
V_Z = 300 V
600 L_C = 200 mH
500
T_J = 125°C
T_J = 25°C
I_C = 10 A
400
300
I_C = 5 A
200
100
3
4
5
6
7
8
h_FE, FORCED GAIN
9
10
Figure 18. Inductive Crossover Time
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