NSBC114YPDXV6T5G Datasheet, PDF (7/10 Pages) ON Semiconductor – Complementary Bias Resistor Transistors

MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6
TYPICAL CHARACTERISTICS − PNP TRANSISTOR
NSBC114YPDP6
1
I_C/I_B = 10
25C
150C
0.1
−55C
1000
V_CE = 10 V
100
25C
150C
−55C
10
0.01
0
7
6
5
4
3
2
1
00
10
20
30
40
I_C, COLLECTOR CURRENT (mA)
Figure 17. V_CE(sat) vs. I_C
1
50
0.1
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 18. DC Current Gain
100
f = 10 kHz
I_E = 0 A
T_A = 25C
10
1
−55C
0.1
25C
10
20
30
40
V_R, REVERSE VOLTAGE (V)
Figure 19. Output Capacitance
0.01
0.001
50
01
150C
V_O = 5 V
2 3 4 5 6 7 12 11 10 11
V_in, INPUT VOLTAGE (V)
Figure 20. Output Current vs. Input Voltage
100
10 _25C
−55C
1
150C
0.1
0
V_O = 0.2 V
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 21. Input Voltage vs. Output Current
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