NSBC114YPDXV6T5G Datasheet, PDF (6/10 Pages) ON Semiconductor – Complementary Bias Resistor Transistors

MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6
TYPICAL CHARACTERISTICS − NPN TRANSISTOR
NSBC114YPDP6
1
I_C/I_B = 10
25C
0.1
150C
−55C
1000
V_CE = 10 V
100
25C
150C
−55C
10
0.01
0
10
20
30
40
I_C, COLLECTOR CURRENT (mA)
Figure 12. V_CE(sat) vs. I_C
1
50
0.1
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
2.4
2
1.6
1.2
0.8
0.4
0
0
100
f = 10 kHz
I_E = 0 A
T_A = 25C
10
1
0.1
−55C
25C
10
20
30
40
V_R, REVERSE VOLTAGE (V)
Figure 14. Output Capacitance
0.01
0.001
50
0
150C
V_O = 5 V
1
2
3
4
5
6
7
V_in, INPUT VOLTAGE (V)
Figure 15. Output Current vs. Input Voltage
100
10 _25C
−55C
1
150C
0.1
0
V_O = 0.2 V
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage vs. Output Current
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