NSBC114YPDXV6T5G Datasheet, PDF(3/10 Page) ON Semiconductor – Complementary Bias Resistor Transistors

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NSBC114YPDXV6T5G Datasheet, PDF (3/10 Pages) ON Semiconductor – Complementary Bias Resistor Transistors

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MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6

ELECTRICAL CHARACTERISTICS (TA = 25ï°C both polarities Q1 (PNP) & Q2 (NPN), unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

OFF CHARACTERISTICS

Collector-Base Cutoff Current

(VCB = 50 V, IE = 0)

ICBO

100

Collector-Emitter Cutoff Current

(VCE = 50 V, IB = 0)

ICEO

500

Emitter-Base Cutoff Current

(VEB = 6.0 V, IC = 0)

IEBO

0.2

Collector-Base Breakdown Voltage

(IC = 10 mA, IE = 0)

V(BR)CBO

Collector-Emitter Breakdown Voltage (Note 6)

(IC = 2.0 mA, IB = 0)

V(BR)CEO

ON CHARACTERISTICS

DC Current Gain (Note 6)

(IC = 5.0 mA, VCE = 10 V)

hFE

140

Collector-Emitter Saturation Voltage (Note 6)

(IC = 10 mA, IB = 0.3 mA)

VCE(sat)

0.25

Input Voltage (Off)

(VCE = 5.0 V, IC = 100 mA) (NPN)

(VCE = 5.0 V, IC = 100 mA) (PNP)

Input Voltage (On)

(VCE = 0.2 V, IC = 1.0 mA) (NPN)

(VCE = 0.2 V, IC = 1.0 mA) (PNP)

Vi(off)

0.7

Vi(on)

0.8

0.9

Output Voltage (On)

(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)

VOL

0.2

Output Voltage (Off)

(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)

VOH

4.9

Input Resistor

7.0

Resistor Ratio

6. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle ï£ 2%.

R1/R2

0.17

0.21

0.25

Unit

nAdc

mAdc

Vdc

400

350

300

250

200

(1) (2) (3)

150

100

(1) SOTâ363; 1.0 ï´ 1.0 Inch Pad

(2) SOTâ563; Minimum Pad

(3) SOTâ963; 100 mm2, 1 oz. Copper Trace

â50 â25

0 25 50 75 100 125 150

AMBIENT TEMPERATURE (ï°C)

Figure 1. Derating Curve

http://onsemi.com

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