NSBC114YPDXV6T5G Datasheet, PDF (5/10 Pages) ON Semiconductor – Complementary Bias Resistor Transistors

MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6
TYPICAL CHARACTERISTICS − PNP TRANSISTOR
MUN5314DW1, NSBC114YPDXV6
1
I_C/I_B = 10
0.1
150C
−55C
25C
1000
V_CE = 10 V
100
25C
150C
−55C
10
0.01
0
10
20
30
40
I_C, COLLECTOR CURRENT (mA)
Figure 7. V_CE(sat) vs. I_C
1
50
0.1
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
10
100
9
f = 10 kHz
−55C
8
I_E = 0 A
T_A = 25C
10
7
6
1
5
25C
4
0.1
3
150C
2
0.01
1
V_O = 5 V
0
0
10
0.001
20
30
40
50
0
1
2
3
4
5
6
7
V_R, REVERSE VOLTAGE (V)
V_in, INPUT VOLTAGE (V)
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
100
10 _25C
−55C
1
150C
0.1
0
V_O = 0.2 V
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
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