MUN5312DW1 Datasheet, PDF (7/10 Pages) ON Semiconductor – Complementary Bias Resistor Transistors R1 = 22 k, R2 = 22 k

MUN5312DW1, NSBC124EPDXV6, NSBC124EPDP6
TYPICAL CHARACTERISTICS − PNP TRANSISTOR
NSBC124EPDP6
1
I_C/I_B = 10
25C
0.1
150C
−55C
0.01
0
10
20
30
40
I_C, COLLECTOR CURRENT (mA)
Figure 17. V_CE(sat) vs. I_C
1000
100
10
1
50
0.1
150C
25C
−55C
V_CE = 10 V
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 18. DC Current Gain
7
100
f = 10 kHz
150C
6
I_E = 0 A
−55C
5
T_A = 25C
10
25C
4
1
3
2
0.1
1
V_O = 5 V
0
0.01
0
10
20
30
40
50
0
2
4
6
8
10
12 14
V_R, REVERSE VOLTAGE (V)
Figure 19. Output Capacitance
V_in, INPUT VOLTAGE (V)
Figure 20. Output Current vs. Input Voltage
100
25C
10
−55C
1 ^150C
V_O = 0.2 V
0.1
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 21. Input Voltage vs. Output Current
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