MUN5312DW1 Datasheet, PDF (6/10 Pages) ON Semiconductor – Complementary Bias Resistor Transistors R1 = 22 k, R2 = 22 k

MUN5312DW1, NSBC124EPDXV6, NSBC124EPDP6
TYPICAL CHARACTERISTICS − NPN TRANSISTOR
NSBC124EPDP6
1
I_C/I_B = 10
0.1
150C
25C
−55C
1000
V_CE = 10 V
100
10
25C
150C
−55C
0.01
1
0
10
20
30
40
50
0.1
1
10
100
I_C, COLLECTOR CURRENT (mA)
I_C, COLLECTOR CURRENT (mA)
Figure 12. V_CE(sat) vs. I_C
Figure 13. DC Current Gain
2.4
2.0
1.6
1.2
0.8
0.4
0
0
f = 10 kHz
I_E = 0 A
T_A = 25C
100
150C
10
25C
−55C
1
10
20
30
40
V_R, REVERSE VOLTAGE (V)
Figure 14. Output Capacitance
0.1
V_O = 5 V
0.01
50
0
2
4
6
8 10 12 14 16
V_in, INPUT VOLTAGE (V)
Figure 15. Output Current vs. Input Voltage
100
25C
10
−55C
150C
1
V_O = 0.2 V
0.1
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage vs. Output Current
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