MUN5312DW1 Datasheet, PDF (5/10 Pages) ON Semiconductor – Complementary Bias Resistor Transistors R1 = 22 k, R2 = 22 k

MUN5312DW1, NSBC124EPDXV6, NSBC124EPDP6
TYPICAL CHARACTERISTICS − PNP TRANSISTOR
MUN5312DW1, NSBC124EPDXV6
10
I_C/I_B = 10
1
0.1
1000
T_A = −25C
25C
75C
100
V_CE = 10 V
T_A = 75C
−25C
25C
0.01
0
20
40
60
I_C, COLLECTOR CURRENT (mA)
Figure 7. V_CE(sat) vs. I_C
10
80
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
10
9
f = 10 kHz
100
75C
25C
8
7
l_E = 0 A
10
T_A = 25C
T_A = −25C
6
1
5
4
0.1
3
2
0.01
1
V_O = 5 V
0
0
10
20
30
40
50
0.001 _{0 1 2 3 4 5 6 7 8 9 10}
V_R, REVERSE VOLTAGE (V)
V_in, INPUT VOLTAGE (V)
Figure 9. Output Capacitance
Figure 10. Output Current vs. Input Voltage
100
V_O = 0.2 V
T_A = −25C
25C
10
75C
1
0.1
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage vs. Output Current
http://onsemi.com
5