MUN5312DW1 Datasheet, PDF (4/10 Pages) ON Semiconductor – Complementary Bias Resistor Transistors R1 = 22 k, R2 = 22 k

MUN5312DW1, NSBC124EPDXV6, NSBC124EPDP6
TYPICAL CHARACTERISTICS − NPN TRANSISTOR
MUN5312DW1, NSBC124EPDXV6
1
I_C/I_B = 10
0.1
T_A = −25C
25C
75C
0.01
1000
100
25C
V_CE = 10 V
T_A = 75C
−25C
0.001
0
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
20
40
I_C, COLLECTOR CURRENT (mA)
Figure 2. V_CE(sat) vs. I_C
10
50
1
10
100
I_C, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
100
f = 10 kHz
I_E = 0 A
10
T_A = 25C
1
75C
25C
T_A = −25C
0.1
10
20
30
40
V_R, REVERSE VOLTAGE (V)
Figure 4. Output Capacitance
0.01
V_O = 5 V
50 ^0.001 0
2
4
6
8
10
V_in, INPUT VOLTAGE (V)
Figure 5. Output Current vs. Input Voltage
100
V_O = 0.2 V
10
1
T_A = −25C
75C
25C
0.1
0
10
20
30
40
50
I_C, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage vs. Output Current
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