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| MTB50P03HDL_14 Datasheet, PDF (7/9 Pages) ON Semiconductor – P-Channel Power MOSFET | |||
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MTB50P03HDL, MVB50P03HDLT4G
TYPICAL ELECTRICAL CHARACTERISTICS
1.0
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
1.0E-05
0.01
SINGLE PULSE
1.0E-04
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
1.0E-03
1.0E-02
t, TIME (s)
1.0E-01
Figure 14. Thermal Response
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
1.0E+00
1.0E+01
IS
tp
di/dt
trr
ta
tb
0.25 IS
IS
TIME
Figure 15. Diode Reverse Recovery Waveform
3
RqJA = 50°C/W
Board material = 0.065 mil FRâ4
2.5
Mounted on the minimum recommended footprint
Collector/Drain Pad Size â 450 mils x 350 mils
2.0
1.5
1
0.5
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (°C)
Figure 16. D2PAK Power Derating Curve
ORDERING INFORMATION
Device
Package
Shippingâ
MTB50P03HDLG
D2PAK
(PbâFree)
50 Units / Rail
MTB50P03HDLT4G
D2PAK
(PbâFree)
800 / Tape & Reel
MVB50P03HDLT4G*
D2PAK
(PbâFree)
800 / Tape & Reel
â For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*MVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECâQ101 Qualified and PPAP
Capable.
http://onsemi.com
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