MTB50P03HDL_14 Datasheet, PDF (3/9 Pages) ON Semiconductor – P-Channel Power MOSFET

MTB50P03HDL, MVB50P03HDLT4G
TYPICAL ELECTRICAL CHARACTERISTICS
100
T_J = 25°C
80
V_GS = 10 V
5V
8V
6V
60
4.5 V
4V
3.5 V
40
3V
20
2.5 V
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
100
V_DS ≥ 5 V
80
T_J = - 55°C
25°C
100°C
60
40
20
0
1.5 1.9
2.3 2.7
3.1
3.5 3.9 4.3
V_GS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.029
0.027
V_GS = 5 V
0.025
0.023
0.021
T_J = 100°C
25°C
0.019
0.017
- 55°C
0.015
0
20
40
60
80
100
I_D, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.022
0.021
T_J = 25°C
V_GS = 5 V
0.020
0.019
0.018
0.017
10 V
0.016
0.015
0
20
40
60
80
100
I_D, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.35
V_GS = 5 V
I_D = 25 A
1.25
1.15
1.05
1000
V_GS = 0 V
100
T_J = 125°C
0.95
100°C
0.85
10
- 50 - 25 0 25 50 75 100 125 150
0
T_J, JUNCTION TEMPERATURE (°C)
5
10
15
20
25
30
V_DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage
Current versus Voltage
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