MTB50P03HDL_14 Datasheet, PDF (2/9 Pages) ON Semiconductor – P-Channel Power MOSFET

MTB50P03HDL, MVB50P03HDLT4G
ELECTRICAL CHARACTERISTICS (T_J = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(V_GS = 0 Vdc, I_D = 250 mAdc)
Temperature Coefficient (Positive)
(C_pk ≥ 2.0) (Note 3)
V_(BR)DSS
30
−
−
26
Vdc
−
−
mV/°C
Zero Gate Voltage Drain Current
(V_DS = 30 Vdc, V_GS = 0 Vdc)
(V_DS = 30 Vdc, V_GS = 0 Vdc, T_J = 125°C)
Gate−Body Leakage Current
(V_GS = ±15 Vdc, V_DS = 0 Vdc)
I_DSS
mAdc
−
−
1.0
−
−
10
I_GSS
nAdc
−
−
100
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(V_DS = V_GS, I_D = 250 mAdc)
Threshold Temperature Coefficient (Negative)
(C_pk ≥ 3.0) (Note 3)
V_GS(th)
Vdc
1.0
1.5
2.0
−
4.0
−
mV/°C
Static Drain−Source On−Resistance
(V_GS = 5.0 Vdc, I_D = 25 Adc)
Drain−Source On−Voltage (V_GS = 5.0 Vdc)
(I_D = 50 Adc)
(I_D = 25 Adc, T_J =125°C)
Forward Transconductance
(V_DS = 5.0 Vdc, I_D = 25 Adc)
(C_pk ≥ 3.0) (Note 3)
R_DS(on)
mW
−
20.9
25
V_DS(on)
Vdc
−
0.83
1.5
−
−
1.3
g_FS
mhos
15
20
−
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V_DS = 25 Vdc, V_GS = 0 Vdc, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(V_DD= 15 Vdc, I_D = 50 Adc,
V_GS = 5.0 Vdc, R_G = 2.3 W)
Fall Time
Gate Charge (See Figure 8)
(V_DS = 24 Vdc, I_D = 50 Adc,
V_GS = 5.0 Vdc)
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_T
Q₁
Q₂
Q₃
−
3500 4900
pF
−
1550 2170
−
550
770
−
22
30
ns
−
340
466
−
90
117
−
218
300
−
74
100
nC
−
13.6
−
−
44.8
−
−
35
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I_S = 50 Adc, V_GS = 0 Vdc)
V_SD
(I_S = 50 Adc, V_GS = 0 Vdc, T_J = 125°C)
Vdc
−
2.39
3.0
−
1.84
−
Reverse Recovery Time
(See Figure 15)
Reverse Recovery Stored Charge
(I_S = 50 Adc, V_GS = 0 Vdc,
dI_S/dt = 100 A/ms)
t_rr
t_a
t_b
Q_RR
−
106
−
ns
−
58
−
−
48
−
−
0.246
−
mC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
L_D
−
3.5
−
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values.
Max limit − Typ
C_pk =
3 x SIGMA
L_S
−
7.5
−
nH
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