MTB50P03HDL_14 Datasheet, PDF (1/9 Pages) ON Semiconductor – P-Channel Power MOSFET

MTB50P03HDL,
MVB50P03HDLT4G
P-Channel Power MOSFET
50 A, 30 V, Logic Level D²PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Features
• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured − Not Sheared
• Specially Designed Leadframe for Maximum Power Dissipation
• MVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−Source Voltage
Drain−Gate Voltage (R_GS = 1.0 MW)
Gate−Source Voltage
− Continuous
− Non−Repetitive (t_p ≤ 10 ms)
V_DSS
V_DGR
V_GS
V_GSM
30
Vdc
30
Vdc
±15
Vdc
± 20
Vpk
Drain Current − Continuous
I_D
Drain Current − Continuous @ 100°C
I_D
Drain Current − Single Pulse (t_p ≤ 10 ms)
I_DM
50
Adc
31
150
Apk
Total Power Dissipation
P_D
Derate above 25°C
Total Power Dissipation @ T_C = 25°C, when
mounted with min. recommended pad size
125
W
1.0
W/°C
2.5
W
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T_J = 25°C
(V_DD = 25 Vdc, V_GS = 5.0 Vdc, Peak
I_L = 50 Apk, L = 1.0 mH, R_G = 25 W)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient, when mounted with
the minimum recommended pad size
T_J, T_stg
E_AS
R_qJC
R_qJA
R_qJA
− 55 to 150
1250
1.0
62.5
50
°C
mJ
°C/W
Maximum Lead Temperature for Soldering
T_L
Purposes, 1/8″ from case for 10 seconds
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
http://onsemi.com
50 AMPERES
30 VOLTS
R_DS(on) = 25 mW
P−Channel
D
G
S
12
3
4
D²PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
M
TB
50P03HG
AYWW
1
Gate
2
Drain
3
Source
MTB50P03H = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
January, 2014 − Rev. 7
Publication Order Number:
MTB50P03HDL/D