 English |
|
|
|
|
|
|
|
| BUH50G Datasheet, PDF (7/8 Pages) ON Semiconductor – SWITCHMODE NPN Silicon Planar Power Transistor | |||
| |||
| ◁ |
BUH50G
TYPICAL CHARACTERISTICS
Table 1. Inductive Load Switching Drive Circuit
+15 V
1 mF
150 W
100 W
MTP8P10
3W
3W
100 mF
+10 V
MPF930
MPF930
MTP8P10
MUR105
RB1
Iout
A
VCE
IB1
IB
50
W
COMMON
500 mF
-Voff
MJE210
RB2
150 W
3W
MTP12N10
1 mF
V(BR)CEO(sus)
L = 10 mH
RB2 = â
VCC = 20 Volts
IC(pk) = 100 mA
VCE PEAK
IC PEAK
IB2
Inductive Switching
L = 200 mH
RB2 = 0
VCC = 15 Volts
RB1 selected for
âdesired IB1
RBSOA
L = 500 mH
RB2 = 0
VCC = 15 Volts
RB1 selected for
âdesired IB1
1
0.5
0.2
0.1
0.1 0.05
0.02
SINGLE PULSE
0.01
0.01
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
RqJC(t) = r(t) RqJC
RqJC = 2.5°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
0.1
1
10
100
1000
t, TIME (ms)
Figure 22. Typical Thermal Response (ZqJC(t)) for BUH50
http://onsemi.com
7
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese