BUH50G Datasheet, PDF (3/8 Pages) ON Semiconductor – SWITCHMODE NPN Silicon Planar Power Transistor

100
T_J = 125°C
T_J = 25°C
10
T_J = - 40°C
BUH50G
TYPICAL STATIC CHARACTERISTICS
100
V_CE = 1 V
T_J = 125°C
T_J = 25°C
10
T_J = - 40°C
V_CE = 5 V
1
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ 1 Volt
1
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 2. DC Current Gain @ 5 Volt
10
10
T_J = 25°C
I_C/I_B = 3
4A
3A
1
2A
1A
I_C = 500 mA
0.1
0.01
0.1
1
10
I_B, BASE CURRENT (mA)
Figure 3. Collector Saturation Region
1
T_J = - 40°C
0.1
T_J = 125°C
T_J = 25°C
0.01
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 4. Collector−Emitter Saturation Voltage
10
I_C/I_B = 5
1
T_J = - 40°C
0.1
T_J = 125°C
T_J = 25°C
0.01
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 5. Collector−Emitter Saturation Voltage
10
I_C/I_B = 3
1
T_J = 125°C
T_J = - 40°C
T_J = 25°C
0.1
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 6. Base−Emitter Saturation Region
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