BUH50G Datasheet, PDF (5/8 Pages) ON Semiconductor – SWITCHMODE NPN Silicon Planar Power Transistor

BUH50G
TYPICAL CHARACTERISTICS
250
t_c
T_J = 125°C
T_J = 25°C
200
150
100
I_Boff = I_C/2
50 V_CC = 15 V
V_Z = 300 V
t_fi
0 ^{LC = 200 mH}
1
2
3
4
I_C, COLLECTOR CURRENT (AMPS)
Figure 13. Inductive Switching, t_c & t_fi @ I_C/I_B = 5
4000
3000
2000
1000
0
3
T_J = 125°C
T_J = 25°C
I_C = 1 A
I_Boff = I_C/2
V_CC = 15 V
V_Z = 300 V
L_C = 200 mH
I_C = 2 A
4
5
6
7
8
9
10
h_FE, FORCED GAIN
Figure 14. Inductive Storage Time
150
140
130
120
110
100
90
80
70
60
50
2
I_C = 1 A
350
I_Boff = I_C/2
V_CC = 15 V
V_Z = 300 V
L_C = 200 mH
250
I_C = 1 A
I_Boff = I_C/2
V_CC = 15 V
V_Z = 300 V
L_C = 200 mH
T_J = 125°C
T_J = 25°C
I_C = 2 A
4
6
8
h_FE, FORCED GAIN
Figure 15. Inductive Fall Time
150
I_C = 2 A
T_J = 125°C
T_J = 25°C
50
10
3
5
7
9
11
h_FE, FORCED GAIN
Figure 16. Inductive Crossover Time
1
SECOND BREAKDOWN
0.8
DERATING
0.6
THERMAL DERATING
0.4
0.2
0
20 40
60
80 100 120 140 160
T_C, CASE TEMPERATURE (°C)
Figure 17. Forward Power Derating
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