BUD43D2 Datasheet, PDF (7/12 Pages) ON Semiconductor – Bipolar NPN Transistor

BUD43D2
1000
900
800
700
I_Bon = I_Boff,
V_CE = 15 V,
V_Z = 300 V
L_C = 200 mH
600
500
400
h_FE = 20,
T_J = 125°C
h_FE = 10,
T_J = 125°C
h_FE = 20,
T_J = 25°C
300
h_FE = 10,
T_J = 25°C
200
100
0
0.5
1
1.5
2
I_C, COLLECTOR CURRENT (AMPS)
Figure 19. Inductive Fall Time,
t_fi @ h_FE = 10 and 20
2200
2000
1800
1600
1400
1200
I_Bon = I_Boff,
V_CC = 15 V,
V_Z = 300 V
L_C = 200 mH
h_FE = 20,
T_J = 125°C
h_FE = 10,
T_J = 125°C
1000
800
600
400
200
0
0
h_FE = 20,
T_J = 25°C
h_FE = 10,
T_J = 25°C
0.5
1
1.5
2
I_C, COLLECTOR CURRENT (AMPS)
Figure 20. Inductive Cross Over Time,
t_c @ h_FE = 10
5 _{IBon = IBoff,}
V_CC = 15 V,
V_Z = 300 V
4 ^{LC = 200 mH}
3 ^{IC = 1 A, TJ = 125°C}
I_C = 1 A, T_J = 25°C
2 _{IC = 0.3 A, TJ = 125°C}
I_C = 0.3 A, T_J = 25°C
1
3 4 5 6 7 8 9 10 11 12 13 14 15
h_FE, FORCED GAIN
Figure 21. Inductive Storage Time, t_si
700
I_Bon = I_Boff,
600
V_CC = 15 V,
V_Z = 300 V
L_C = 200 mH
500
400
I_C = 1 A, T_J = 125°C
I_C = 0.3 A,
T_J = 125°C
300
I_C = 0.3 A, T_J = 25°C
200
100
I_C = 1 A, T_J = 25°C
3 4 5 6 7 8 9 10 11 12 13 14 15
h_FE, FORCED GAIN
Figure 22. Inductive Fall Time, t_f
1000
900
800
700
I_Bon = I_Boff,
V_CC = 15 V,
V_Z = 300 V
L_C = 200 mH
I_C = 1 A, T_J = 125°C
600
500
400
I_C = 0.3 A,
T_J = 125°C
I_C = 1 A, T_J = 25°C
300
200
I_C = 0.3 A, T_J = 25°C
100
3
5
7
9
11
13
15
h_FE, FORCED GAIN
Figure 23. Inductive Cross Over Time, t_c
2700
2200
1700
1200
700
200
0
I_B1&2 = 100 mA
I_B1&2 = 500 mA
I_B1&2 = 50 mA
I_Bon = I_Boff,
V_CC = 15 V,
V_Z = 300 V
L_C = 200 mH
I_B1&2 = 200 mA
0.5
1
1.5
2
2.5
3
I_C, COLLECTOR CURRENT (AMPS)
Figure 24. Inductive Storage Time, t_si
http://onsemi.com
7