BUD43D2 Datasheet, PDF (5/12 Pages) ON Semiconductor – Bipolar NPN Transistor

BUD43D2
10
10
1 _{–20°C}
25°C
T_J = 125°C
0.1
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 7. Base–Emitter Saturation Region
I_C/I_B = 5
10
1 _{–20°C}
25°C
T_J = 125°C
0.1
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 8. Base–Emitter Saturation Region
I_C/I_B = 10
10
1 _{–20°C}
25°C
T_J = 125°C
0.1
0.001
0.01
0.1
1
10
I_C, COLLECTOR CURRENT (AMPS)
Figure 9. Base–Emitter Saturation Region
I_C/I_B = 20
V_EC(V) = –20°C
1
125°C
25°C
0.1
0.01
0.1
1
10
REVERSE EMITTER–COLLECTOR CURRENT (AMPS)
Figure 10. Forward Diode Voltage
1000
100
10
1
1
C_ib (pF)
T_J = 25°C
f(test) = 1 MHz
C_ob (pF)
10
100
V_R, REVERSE VOLTAGE (VOLTS)
Figure 11. Capacitance
1000
900
800
B_VCER @ I_CER = 10 mA
T_C = 25°C
700 _{BVCER(sus) @ ICER = 200 mA,}
L_C = 25 mH
600
500
400
10
100
R_BE
Figure 12. B_VCER = f(R_BE)
1000
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