BUD43D2 Datasheet, PDF (6/12 Pages) ON Semiconductor – Bipolar NPN Transistor

BUD43D2
800
700
T_J = 125°C
T_J = 25°C
600
500 ^IBon ^{= I}Boff
V_CC = 300 V
400 PW = 40 ms
I_C/I_B = 10
300
200
100
0
0
I_C/I_B = 5
0.5
1
1.5
2
I_C, COLLECTOR CURRENT (AMPS)
Figure 13. Resistive Switching, t_on
4500
4000
3500
3000
2500
2000
1500
1000
0
I_C/I_B = 10
I_Bon = I_Boff
V_CC = 300 V
Pw = 40 ms
T_J = 125°C
T_J = 25°C
I_C/I_B = 5
0.5
1
1.5
2
I_C, COLLECTOR CURRENT (AMPS)
Figure 14. Resistive Switching, t_off
4
3
T_J = 125°C, G5
2
T_J = 25°C, G5
1
I_Bon = I_Boff,
V_CE = 15 V,
V_Z = 300 V
L_C = 200 mH
0
0
0.5
1
1.5
2
I_C, COLLECTOR CURRENT (AMPS)
Figure 15. Inductive Storage Time, t_si @ G = 5
3500
3000
2500
I_Bon = I_Boff,
V_CE = 15 V,
V_Z = 300 V
L_C = 200 mH
T_J = 125°C,
I_C/I_B = 10
2000
1500
T_J = 25°C,
I_C/I_B = 10
1000
0
0.5
1
1.5
2
I_C, COLLECTOR CURRENT (AMPS)
Figure 16. Inductive Storage Time, t_si @ I_C/I_B = 10
3000
2500
T_J = 125°C,
I_C/I_B = 20
2000
1500
I_Bon = I_Boff,
V_CE = 15 V,
V_Z = 300 V
L_C = 200 mH
1000
0.5
1
T_J = 25°C,
I_C/I_B = 20
1.5
I_C, COLLECTOR CURRENT (AMPS)
Figure 17. Inductive Storage Time,
t_si @ I_C/I_B = 20
700
I_Bon = I_Boff,
600 _{VCC = 15 V,}
V_Z = 300 V
500 L_C = 200 mH
400
300
t_c @ T_J = 125°C
t_c @ T_J = 25°C
200
t_fi @ T_J = 125°C
100
0
2
0
t_fi @ T_J = 25°C
0.5
1
1.5
2
I_C, COLLECTOR CURRENT (AMPS)
Figure 18. Inductive Fall and Cross Over Time,
t_fi and t_c @ h_FE = 5
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