BUD43D2 Datasheet, PDF (2/12 Pages) ON Semiconductor – Bipolar NPN Transistor

BUD43D2
ELECTRICAL CHARACTERISTICS (T_C = 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
Symbol
Min
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{OFF CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH)}
V_CEO(sus)
400
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Base Breakdown Voltage (ICBO = 1 mA)}
@ T_C = 25°C
V_CBO
700
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter–Base Breakdown Voltage (IEBO = 1 mA)}
@ T_C = 25°C
V_EBO
12
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Cutoff Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^(VCE ^{= Rated V}CEO^{, I}B ^{= 0)}
@ T_C = 25°C
I_CEO
–
@ T_C = 125°C
–
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Collector Cutoff Current (V}CE ^{= Rated V}CES^{, V}EB ^{= 0) @ T}C ^{= 25°C}
I_CES
–
@ T_C = 125°C
–
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Cutoff Current (VCE = 500 V, VEB = 0)}
@ T_C = 125°C
–
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter–Cutoff Current (VEB = 10 Vdc, IC = 0)}
@ T_C = 25°C
I_EBO
–
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{ON CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base–Emitter Saturation Voltage
(I_C = 0.4 Adc, I_B = 40 mAdc)
@ T_C = 25°C
V_BE(sat)
–
@ T_C = 125°C
–
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^(IC ^{= 1 Adc, I}B ^{= 0.2 Adc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Saturation Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IC = 0.4 Adc, IB = 20 mAdc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IC = 0.4 Adc, IB = 40 mAdc)}
@ T_C = 25°C
–
@ T_C = 125°C
–
@ T_C = 25°C
V_CE(sat)
–
@ T_C = 125°C
–
@ T_C = 25°C
–
@ T_C = 125°C
–
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 1 Adc, IB = 0.2 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{DC Current Gain}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IC = 0.4 Adc, VCE = 1 Vdc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IC = 1 Adc, VCE = 1 Vdc)}
@ T_C = 25°C
–
@ T_C = 125°C
–
@ T_C = 25°C
h_FE
20
@ T_C = 125°C
18
@ T_C = 25°C
10
@ T_C = 125°C
7.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (I_C = 2 Adc, V_CE = 5 Vdc)
@ T_C = 25°C
8.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{DIODE CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Forward Diode Voltage
(I_EC = 0.2 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IEC = 0.2 Adc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IEC = 0.4 Adc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IEC = 1 Adc)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Forward Recovery Time (see Figure 22)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IF = 0.2 Adc, di/dt = 10 A/ms)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IF = 0.4 Adc, di/dt = 10 A/ms)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{(IF = 1 Adc, di/dt = 10 A/ms)}
V_EC
@ T_C = 25°C
–
@ T_C = 125°C
–
@ T_C = 25°C
–
@ T_C = 25°C
–
T_fr
@ T_C = 25°C
–
@ T_C = 25°C
–
@ T_C = 25°C
–
Typ
470
920
14.5
–
–
–
–
–
–
0.78
0.65
0.85
0.76
0.40
0.60
0.20
0.20
0.25
0.30
32
26
15
9.5
13
0.8
0.6
0.9
1.1
415
390
340
Max
Unit
–
Vdc
–
Vdc
–
Vdc
50
mAdc
500
50
mAdc
500
100
100
mAdc
0.9
Vdc
0.8
1.0
0.9
0.65
Vdc
1.0
0.4
0.5
0.5
0.6
–
–
–
–
–
–
Vdc
1.0
–
1.2
1.5
ns
–
–
–
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