AMIS-42700 Datasheet, PDF (7/14 Pages) AMI SEMICONDUCTOR – Dual High-Speed CAN Transceiver

AMIS−42700
Short Circuits
As specified in the maximum ratings, short circuits of the
bus wires CANHx and CANLx to the positive supply
voltage Vbat or to ground must not destroy the transceiver.
A short circuit between CANHx and CANLx must not
destroy the IC as well.
The dedicated comparator (L2VBAT) on CANL pin
detects the short to battery and after debounce time−out
switches off the affected driver only. The receiver of the
affected driver has to operate normally.
Faulty Supply
In case of a faulty supply (missing connection of the
electronic unit or the transceiver to ground, missing
connection of the electronic unit to Vbat or missing
connection of the transceiver to Vcc), the power supply
module of the electronic unit will operate such that the
transceiver is not supplied, i.e. the voltage Vcc is below the
POR level. In this condition the bus connections of the
transceiver must be in the POR state.
If the ground line of the electronic unit is interrupted, Vbat
may be applied to the Vcc pin (measured relative to the
original ground potential, to which the other units on the bus
are connected).
Reverse Electronic Unit (ECU) Supply
If the connections for ground and supply voltage of an
electronic unit (ECU) (max. 50 V) which provides Vcc for
the transceiver are exchanged, this transceiver has a ground
potential which may be up to 50 V higher than that of the
other transceivers. In this case no transceiver must be
destroyed even if several of them are connected via the bus
system.
Any exchange among the six connections CANH1,
CANH2, CANL1, CANL2, ground, and supply voltage of
the electronic unit at the connector of the unit must never
lead to the destruction of any transceiver of the bus system.
Electrical Characteristics
Definitions
All voltages are referenced to GND. Positive currents
flow into the IC. Sinking current means that the current is
flowing into the pin. Sourcing current means that the current
is flowing out of the pin.
Absolute Maximum Ratings
Stresses above those listed in Table 4 may cause
permanent device failure. Exposure to absolute maximum
ratings for extended periods may affect device reliability.
Table 4. Absolute Maximum Ratings
Symbol
Parameter
Conditions
Min.
Max.
Unit
V_CC
V_CANHx
V_CANLx
V_digIO
Supply voltage
DC voltage at pin CANH1/2
DC voltage at pin CANL1/2
DC voltage at digital IO pins (EN1B, EN2B,
Rint, Rx0, Text, Tx0)
−0.3
+7
V
0 < V_CC < 5.25 V; no time limit −45
+45
V
0 < V_CC < 5.25 V; no time limit −45
+45
V
−0.3 V_CC + 0.3
V
V_REF
V_tran(CANHx)
V_tran(CANLx)
V_{esd(CANLx/CANHx)}
DC voltage at pin V_REF
Transient voltage at pin CANH1/2
Transient voltage at pin CANL1/2
ESD voltage at CANH1/2 and CANL1/2 pins
(Note 4)
(Note 4)
(Note 5)
(Note 7)
−0.3 V_CC + 0.3
V
−150
+150
V
−150
+150
V
−4
+4
kV
−500
+500
V
V_esd
ESD voltage at all other pins
(Note 5)
(Note 7)
−2
+2
kV
−250
+250
V
Latch−up
Static latch−up at all pins
(Note 6)
100
mA
T_stg
Storage temperature
−55
+155
°C
T_amb
Ambient temperature
−40
+125
°C
T_junc
Maximum junction temperature
−40
+150
°C
4. Applied transient waveforms in accordance with “ISO 7637 part 3”, test pulses 1, 2, 3a, and 3b (see Figure 5).
5. Standardized human body model (HBM) ESD pulses in accordance to MIL883 method 3015. Supply pin 8 is ±2 kV.
6. Static latch−up immunity: static latch−up protection level when tested according to EIA/JESD78.
7. Standardized charged device model ESD pulses when tested according to EOS/ESD DS5.3−1993.
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