AMIS-39101 Datasheet, PDF (7/12 Pages) AMI SEMICONDUCTOR – Octal High-Side Driver with Protection

AMIS−39101
Electrical Parameters
Operation outside the operating ranges for extended periods may affect device reliability. Total cumulative dwell time above
the maximum operating rating for the power supply or temperature must be less than 100 hours.
The parameters below are independent from load type. (see Load Specific Parameters section)
Table 6. OPERATING RANGES
Symbol
Description
Min.
Max. Unit
VDDN
Digital power supply voltage
3.1
5.5
V
Vdig_in
Voltage on digital inputs CLK, PDB, WR, DIN
−0.3
VDDN
V
VS ⁽¹⁾
VS power supply on Pins VS1 to VS4
3.5
28
V
Tamb
Ambient temperature
−40
85
°C
7. The power dissipation of the chip must be limited not to exceed maximum junction temperature Tj of 130°C.
Table 7. ELECTRICAL CHARACTERISTICS
Symbol
Description
I_VS_norm (Note 8)
Consumption on VS without load currents In normal mode of operation
PDB = high
I_PDB_3.3
(Notes 8 and 9)
Sum of VS and VDDN consumption in power−down mode of operation
PDB = low, VDDN 3.3 V, VS = 24 V, 23°C ambient
CLK and WR are at VDDN voltage
I_PDB_5
(Notes 8 and 9)
Sum of VS and VDDN consumption in power−down mode of operation
PDB = low, VDDN 5 V, VS = 24 V, 23°C ambient
CLK and WR are at VDDN voltage
I_PDB_MAX_VS
VS consumption in power−down mode of operation PDB = low, VS = 28 V
I_VDDN_norm (Note 8)
Consumption on VDDN, In normal mode of operation PDB = high
CLK is 500 kHz, VDDN = 5.5 V, VS = 28 V
R_on_1..8
On resistance of the output drivers 1 through 8
t VS = 24 V (nominal VS power supply condition)
t VS = 4.6 V (worst case VS power supply condition)
I_OUT_lim_x (Note 8)
Internal over−current limitation of HS driver outputs
T_shortGND_HSdoff
The time from short of HS driver OUTx pin to GND and the driver
deactivation; driver is Off
Detection works from VS minimum of 7 V, VDDN minimum is 3 V
TSD_H (Note 8)
High TSD threshold for junction temperature (temperature rising)
TSD_HYST
TSD hysteresis for junction temperature
8. The power dissipation of the chip must be limited not to exceed maximum junction temperature Tj.
9. The cumulative operation time mentioned above may cause permanent device failure.
Min.
0.65
5,4
130
9
Max. Unit
3.5
mA
25
mA
40
mA
10
mA
1.6
mA
W
1
3
2
A
ms
170
°C
18
°C
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