NST3946DP6T5G_14 Datasheet, PDF (6/7 Pages) ON Semiconductor – Dual Complementary General Purpose Transistor

NST3946DP6T5G
PNP TRANSISTOR
1.1
I_C/I_B = 10
1.0
0.9 _{−55°C}
0.8
0.7 _25°C
0.6
0.5
0.4 ^150°C
0.3
0.0001 0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 10. Base Emitter Saturation Voltage vs.
Collector Current
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.0001
100 mA
80 mA
60 mA
40 mA
20 mA
I_C = 10 mA
0.001
0.01
I_b, BASE CURRENT (A)
Figure 12. Saturation Region
1.1
V_CE = 2.0 V
1.0
0.9
−55°C
0.8
0.7
25°C
0.6
0.5
0.4 ^150°C
0.3
0.0001 0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 11. Base Emitter Turn−On Voltage vs.
Collector Current
9.0
8.0
7.0
6.0
C_ib
5.0
4.0
3.0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V_eb, EMITTER BASE VOLTAGE (V)
Figure 13. Input Capacitance
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
C_ob
1.5
1.0
0
5.0
10
15
20
25
30
V_cb, COLLECTOR BASE VOLTAGE (V)
Figure 14. Output Capacitance
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