NST3946DP6T5G_14 Datasheet, PDF (1/7 Pages) ON Semiconductor – Dual Complementary General Purpose Transistor

NST3946DP6T5G
Dual Complementary
General Purpose Transistor
The NST3946DP6T5G device is a spin−off of our popular
SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for
general purpose amplifier applications and is housed in the SOT−963
six−leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low−power surface mount
applications where board space is at a premium.
Features
• h_FE, 100−300
• Low V_CE(sat), ≤ 0.4 V
• Reduces Board Space and Component Count
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Electrostatic Discharge
Symbol
HBM
MM
V_CEO
V_CBO
V_EBO
I_C
ESD
Class
Value
40
60
6.0
200
2
B
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
http://onsemi.com
(3)
(2)
(1)
Q₁
Q₂
(4)
(5)
(6)
NST3946DP6T5G*
*Q1 PNP
Q2 NPN
65 ⁴
12 ³
SOT−963
CASE 527AD
Characteristic (Single Heated)
Total Device Dissipation T_A = 25°C
Derate above 25°C (Note 1)
Thermal Resistance, Junction-to-Ambient
(Note 1)
Symbol
P_D
R_qJA
Max
240
1.9
520
Unit
mW
mW/°C
°C/W
MARKING DIAGRAM
MG
G
1
Total Device Dissipation T_A = 25°C
Derate above 25°C (Note 2)
Thermal Resistance, Junction-to-Ambient
(Note 2)
Characteristic (Dual Heated) (Note 3)
Total Device Dissipation T_A = 25°C
Derate above 25°C (Note 1)
Thermal Resistance, Junction-to-Ambient
(Note 1)
P_D
R_qJA
Symbol
P_D
R_qJA
280
2.2
446
Max
350
2.8
357
mW
mW/°C
°C/W
Unit
mW
mW/°C
°C/W
L = Device Code
(180° Clockwise Rotation)
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping^†
Total Device Dissipation T_A = 25°C
Derate above 25°C (Note 2)
P_D
420
mW
3.4
mW/°C
Thermal Resistance, Junction-to-Ambient
(Note 2)
R_qJA
297
°C/W
Junction and Storage Temperature Range T_J, T_stg −55 to
°C
+150
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ 100 mm², 1 oz. copper traces, still air.
2. FR−4 @ 500 mm², 1 oz. copper traces, still air.
3. Dual heated values assume total power is sum of two equally powered channels
NST3946DP6T5G SOT−963 8000/Tape & Reel
(Pb−Free)
NSVT3946DP6T5G SOT−963 8000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
1
June, 2014 − Rev. 2
Publication Order Number:
NST3946DP6/D