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NST3946DP6T5G_14 Datasheet, PDF (2/7 Pages) ON Semiconductor – Dual Complementary General Purpose Transistor
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NST3946DP6T5G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 4)
(IC = 1.0 mAdc, IB = 0)
(IC = −1.0 mAdc, IB = 0)
(NPN)
(PNP)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
(IC = −10 mAdc, IE = 0)
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
(IE = −10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = −30 Vdc, VEB = −3.0 Vdc)
(NPN)
(PNP)
(NPN)
(PNP)
(NPN)
(PNP)
V(BR)CBO
V(BR)EBO
ICEX
ON CHARACTERISTICS (Note 4)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
hFE
(NPN)
(IC = −0.1 mAdc, VCE = −1.0 Vdc)
(IC = −1.0 mAdc, VCE = −1.0 Vdc)
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −50 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
(PNP)
(NPN)
VCE(sat)
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
(PNP)
(NPN)
VBE(sat)
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
4. Pulse Test: Pulse Width ≤ 300 μs; Duty Cycle ≤ 2.0%.
(PNP)
Min
40
−40
60
−40
6.0
−5.0
−
−
40
70
100
60
30
60
80
100
60
30
−
−
−
−
0.65
−
−0.65
−
Max
−
−
−
−
−
−
50
−50
−
−
300
−
−
−
−
300
−
−
0.2
0.3
−0.25
−0.4
0.85
0.95
−0.85
−0.95
Unit
Vdc
Vdc
Vdc
nAdc
−
Vdc
Vdc
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