NST3946DP6T5G_14 Datasheet, PDF (3/7 Pages) ON Semiconductor – Dual Complementary General Purpose Transistor

NST3946DP6T5G
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(I_C = 10 mAdc, V_CE = 20 Vdc, f = 100 MHz)
(I_C = −10 mAdc, V_CE = −20 Vdc, f = 100 MHz)
f_T
(NPN)
200
(PNP)
250
Output Capacitance
(V_CB = 5.0 Vdc, I_E = 0, f = 1.0 MHz)
(V_CB = −5.0 Vdc, I_E = 0, f = 1.0 MHz)
C_obo
(NPN)
−
(PNP)
−
Input Capacitance
(V_EB = 0.5 Vdc, I_C = 0, f = 1.0 MHz)
(V_EB = −0.5 Vdc, I_C = 0, f = 1.0 MHz)
C_ibo
(NPN)
−
(PNP)
−
Noise Figure
NF
(V_CE = 5.0 Vdc, I_C = 100 mAdc, R_S = 1.0 k Ω, f = 1.0 kHz)
(NPN)
−
(V_CE = −5.0 Vdc, I_C = −100 mAdc, R_S = 1.0 k Ω, f = 1.0 kHz) (PNP)
−
SWITCHING CHARACTERISTICS
Delay Time
(V_CC = 3.0 Vdc, V_BE = − 0.5 Vdc)
(NPN)
t_d
−
(V_CC = −3.0 Vdc, V_BE = 0.5 Vdc)
(PNP)
−
Rise Time
(I_C = 10 mAdc, I_B1 = 1.0 mAdc)
(NPN)
t_r
−
(I_C = −10 mAdc, I_B1 = −1.0 mAdc)
(PNP)
−
Storage Time
(V_CC = 3.0 Vdc, I_C = 10 mAdc)
(NPN)
t_s
−
(V_CC = −3.0 Vdc, I_C = −10 mAdc)
(PNP)
−
Fall Time
(I_B1 = I_B2 = 1.0 mAdc)
(I_B1 = I_B2 = −1.0 mAdc)
(NPN)
t_f
−
(PNP)
−
Max
Unit
MHz
−
−
pF
4.0
4.5
pF
8.0
10.0
dB
5.0
4.0
35
35
ns
35
35
275
250
ns
50
50
NPN TRANSISTOR
0.28
0.23
I_C/I_B = 10
V_CE(sat) = 150°C
0.18
−55°C
0.13
25°C
0.08
0.03
0.0001 0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage vs.
Collector Current
400
350 ^{150°C (5.0 V)}
300 150°C (1.0 V)
250 _{25°C (5.0 V)}
200 _{25°C (1.0 V)}
150 _{−55°C (5.0 V)}
100 ^{−55°C (1.0 V)}
50
0
0.0001 0.001
0.01
0.1
1
I_C, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain vs. Collector Current
http://onsemi.com
3