MMUN2111LT1 Datasheet, PDF (6/12 Pages) Motorola, Inc – PNP SILICON BIAS RESISTOR TRANSISTOR

1
IC/IBĂ=Ă10
ā0.1
MMUN2111LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2113LT1
1000
TAĂ=Ă-25°C _25°C
75°C
100
TAĂ=Ă75°C
25°C
-25°C
ā0.01 ₀
1
0.8
0.6
0.4
0.2
00
10
20
30
IC, COLLECTOR CURRENT (mA)
40
10
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
100
f = 1 MHz
lE = 0 V
TA = 25°C
10
1
TAĂ=Ă75°C
25°C
-25°C
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 14. Output Capacitance
ā0.1
ā0.01
VO = 5 V
ā0.001
50
0 1 ā2 ā3 ā4 ā5 ā6 ā7 ā8 Ă9 10
Vin, INPUT VOLTAGE (VOLTS)
Figure 15. Output Current versus Input Voltage
100
VO = 2 V
TAĂ=Ă-25°C
25°C
10
75°C
1
Ă0.1 ₀
10
ā20
30
ā40
ā50
IC, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output Current
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