MMUN2111LT1 Datasheet, PDF (4/12 Pages) Motorola, Inc – PNP SILICON BIAS RESISTOR TRANSISTOR

250
200
150
100
50
0
-50
1000
100
MMUN2111LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2111LT1
1
IC/IBĂ=Ă10
ā0.1
R_θJA = 625°C/W
TAĂ=Ă-25°C
25°C
75°C
0
50
100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
ā0.01
150
0
4
VCE = 10 V
3
TAĂ=Ă75°C
25°C
-25°C
2
20
ā40
ā60
ā80
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
f = 1 MHz
lE = 0 V
TA = 25°C
1
10
1
10
100
0
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. DC Current Gain
Figure 4. Output Capacitance
100
75°C
25°C
10
TAĂ=Ă-25°C
1
ā0.1
ā0.01
VO = 5 V
ā0.001
01
ā2 ā3 ā4 ā5
ā6 ā7 ā8 ā9 10
Vin, INPUT VOLTAGE (VOLTS)
Figure 5. Output Current versus Input Voltage
100
VO = 0.2 V
10
1
TAĂ=Ă-25°C
25°C
75°C
ā0.1
0
10
ā20
ā30
ā40
ā50
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
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