MMUN2111LT1 Datasheet, PDF (2/12 Pages) Motorola, Inc – PNP SILICON BIAS RESISTOR TRANSISTOR

MMUN2111LT1 Series
DEVICE MARKING AND RESISTOR VALUES
Device
Package
Marking
R1 (K)
MMUN2111LT1
MMUN2111LT3
SOT–23
A6A
10
MMUN2112LT1
MMUN2112LT3
SOT–23
A6B
22
MMUN2113LT1
MMUN2113LT3
SOT–23
A6C
47
MMUN2114LT1
MMUN2114LT3
SOT–23
A6D
10
MMUN2115LT1 (Note 3.)
SOT–23
A6E
10
MMUN2115LT3
MMUN2116LT1 (Note 3.)
SOT–23
A6F
4.7
MMUN2116LT3
MMUN2130LT1 (Note 3.)
SOT–23
A6G
1.0
MMUN2130LT3
MMUN2131LT1 (Note 3.)
SOT–23
A6H
2.2
MMUN2131LT3
MMUN2132LT1 (Note 3.)
SOT–23
A6J
4.7
MMUN2132LT3
MMUN2133LT1 (Note 3.)
SOT–23
A6K
4.7
MMUN2133LT3
MMUN2134LT1 (Note 3.)
SOT–23
A6L
22
MMUN2134LT3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
MMUN2111LT1
MMUN2112LT1
MMUN2113LT1
MMUN2114LT1
MMUN2115LT1
MMUN2116LT1
MMUN2130LT1
MMUN2131LT1
MMUN2132LT1
MMUN2133LT1
MMUN2134LT1
ICBO
ICEO
IEBO
Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0)
V(BR)CBO
Collector-Emitter Breakdown Voltage (Note 4.)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
3. New devices. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
R2 (K)
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
Min
Typ
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
50
–
50
–
Shipping
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
Max
Unit
100
nAdc
500
nAdc
0.5
mAdc
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
–
Vdc
–
Vdc
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