MMUN2111LT1 Datasheet, PDF (5/12 Pages) Motorola, Inc – PNP SILICON BIAS RESISTOR TRANSISTOR

10
IC/IBĂ=Ă10
1
MMUN2111LT1 Series
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2112LT1
1000
TAĂ=Ă-25°C
25°C
75°C
100
VCE = 10 V
TAĂ=Ă75°C
25°C
-25°C
ā0.1
ā0.01
0
4
3
2
1
0
0
ā20
ā40
ā60
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
10
ā80
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
f = 1 MHz
lE = 0 V
TA = 25°C
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
100
75°C 25°C
TAĂ=Ă-25°C
10
1
ā0.1
ā0.01
VO = 5 V
ā0.001 _{0 1 ā2 ā3}
ā4 ā5
ā6
ā7 ā8 ā9
10
Vin, INPUT VOLTAGE (VOLTS)
Figure 10. Output Current versus Input Voltage
100
VO = 0.2 V
TAĂ=Ă-25°C
10
25°C
75°C
1
ā0.1 ₀
10
ā20
ā30
ā40
ā50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
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