MMDFS3P303-D Datasheet, PDF (6/12 Pages) ON Semiconductor – Power MOSFET 3 Amps, 30 Volts

1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
1E-03
MMDFS3P303
TYPICAL FET ELECTRICAL CHARACTERISTICS
NORMALIZED TO R_qJA AT STEADY STATE (1″ PAD)
SINGLE PULSE
1E-02
CHIP
JUNCTION
2.32 W 18.5 W 50.9 W
0.0014 F 0.0073 F 0.022 F
37.1 W
0.105 F
56.8 W
0.484 F
24.4 W
3.68 F
AMBIENT
1E-01
1E+00
t, TIME (s)
1E+01
Figure 13. FET Thermal Response
1E+02
1E+03
di/dt
IS
trr
ta
tb
TIME
tp
0.25 IS
IS
Figure 14. Diode Reverse Recovery Waveform
TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS
10
85°C
10
25°C
85°C
TJ = 125°C
1.0
-ā40°C
TJ = 125°C
25°C
1.0
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 15. Typical Forward Voltage
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 16. Maximum Forward Voltage
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