MMDFS3P303-D Datasheet, PDF (5/12 Pages) ON Semiconductor – Power MOSFET 3 Amps, 30 Volts

MMDFS3P303
TYPICAL FET ELECTRICAL CHARACTERISTICS
1200
VDS = 0 VGS = 0
1000 ^Ciss
12
TJ = 25°C
10
25
QT
20
800
600 ^Crss
Ciss
400
Coss
200
Crss
0
-10 -ā5.0 0 5.0 10 15 20 25 30
VGS VDS
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
8.0
6.0 Q1
Q2
4.0
VGS
15
10
ID = 3.5 A
2.0
Q3
TJ = 25°C ^5.0
0
VDS
0
0
2.0 4.0
6.0 8.0
10
12
14
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate–To–Source and
Drain–To–Source Voltage versus Total Charge
1000
VGS = 10 V
TJ = 25°C
ID = 2.0 A
VDD = 15 V
100
td(off)
tf
tr
10
td(on)
2.5
VGS = 0 V
2.0
TJ = 25°C
1.5
1.0
0.5
1.0
1.0
10
100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
100
VGS = 12 V
SINGLE PULSE
TA = 25°C
10
1.0 ms
10 ms
1.0
dc
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
0.1
1.0
10
100
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0
0
0.2
0.4
0.6
0.8
1.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus
Current
450
400
ID = 3.5 A
350
300
250
200
150
100
50
0
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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