MMDFS3P303-D Datasheet, PDF (3/12 Pages) ON Semiconductor – Power MOSFET 3 Amps, 30 Volts

MMDFS3P303
MOSFET ELECTRICAL CHARACTERISTICS – continued (TJ = 25°C unless otherwise noted) (Notes 1. & 6.)
Characteristics
Symbol Min
Typ
Max
SWITCHING CHARACTERISTICS – continued (Note 7.)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
td(on)
–
19
–
(VDD = 20 Vdc, ID = 2.0 Adc,
tr
–
36
–
VGS = 4.5 Vdc,
RG = 6.0 Ω)
td(off)
–
27
–
tf
–
31
–
Gate Charge
QT
–
14
25
(VDS = 20 Vdc, ID = 3.5 Adc,
Q1
–
1.8
–
VGS = 10 Vdc)
Q2
–
4.5
–
DRAIN SOURCE DIODE CHARACTERISTICS
Q3
–
2.85
–
Forward On–Voltage (Note 6.)
(IS = 1.7 Adc, VGS = 0 Vdc)
VSD
–
0.9
1.2
Reverse Recovery Time
trr
–
26.6
–
Reverse Recovery Stored
Charge
(VGS = 0 V, IS = 3.5 A,
dIS/dt = 100 A/µs)
ta
–
18.8
–
tb
–
7.8
–
QRR
–
0.03
–
SCHOTTKY RECTIFIER ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Maximum Instantaneous Forward Voltage (Note 6.)
IF = 100 mAdc
IF = 3.0 Adc
IF = 6.0 Adc
VF
TJ = 25°C
0.28
0.42
0.50
TJ = 125°C
0.13
0.33
0.45
Maximum Instantaneous Reverse Current (Note 6.)
VR = 30 V
IR
TJ = 25°C
TJ = 125°C
250
–
–
25
Maximum Voltage Rate of Change
VR = 30 V
1. Negative signs for P–Channel device omitted for clarity.
6. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
7. Switching characteristics are independent of operating junction temperature.
dV/dt
10,000
Unit
ns
nC
V
ns
µC
Volts
mA
mA
V/ms
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