MMDFS3P303-D Datasheet, PDF (2/12 Pages) ON Semiconductor – Power MOSFET 3 Amps, 30 Volts

MMDFS3P303
SCHOTTKY RECTIFIER MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
VRRM
VR
Average Forward Current (Note 3.)
IO
(Rated VR) TA = 100°C
Peak Repetitive Forward Current (Note 3.)
Ifrm
(Rated VR, Square Wave, 20 kHz) TA = 105°C
Non–Repetitive Peak Surge Current
Ifsm
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz)
THERMAL CHARACTERISTICS – SCHOTTKY AND MOSFET
Thermal Resistance – Junction–to–Ambient (Note 4.) – MOSFET
R_qJA
Thermal Resistance – Junction–to–Ambient (Note 5.) – MOSFET
R_qJA
Thermal Resistance – Junction–to–Ambient (Note 3.) – MOSFET
R_qJA
Thermal Resistance – Junction–to–Ambient (Note 4.) – Schottky
R_qJA
Thermal Resistance – Junction–to–Ambient (Note 5.) – Schottky
R_qJA
Thermal Resistance – Junction–to–Ambient (Note 3.) – Schottky
R_qJA
Operating and Storage Temperature Range
Tj, Tstg
3. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), 10 sec. max.
4. Mounted with minimum recommended pad size, PC Board FR4.
5. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided), Steady State.
30
3.0
6.0
30
201
105
62.5
197
97
62.5
–55 to 150
Volts
Amps
Amps
Amps
°C/W
°C
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Notes 1. & 6.)
Characteristics
Symbol Min
Typ
OFF CHARACTERISTICS
Drain–Source Voltage
(VGS = 0 Vdc, ID = 0.25 mA)
Temperature Coefficient (Positive)
V(BR)DSS 30
–
–
27
Zero Gate Drain Current (VDS = 30 Vdc, VGS = 0 Vdc)
IDSS
–
–
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
–
–
Gate Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
–
–
ON CHARACTERISTICS (Note 6.)
Gate Threshold Voltage
(VDS = VGS, ID = 0.25 mA)
VGS(th)
1.0
1.7
Temperature Coefficient (Negative)
–
3.5
Static Drain–Source Resistance (VGS = 10 Vdc, ID = 3.5 Adc)
(VGS = 4.5 Vdc, ID = 2.0 Adc)
RDS(on)
–
–
Forward Transconductance (VDS = 15 Vdc, ID = 3.5 Adc)
gFS
–
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
–
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
–
Reverse Transfer Capacitance
Crss
–
SWITCHING CHARACTERISTICS (Note 7.)
Turn–On Delay Time
td(on)
–
Rise Time
Turn–Off Delay Time
(VDD = 20 Vdc, ID = 2.0 Adc,
VGS = 10 Vdc,
RG = 6.0 Ω)
tr
–
td(off)
–
Fall Time
tf
–
1. Negative signs for P–Channel device omitted for clarity.
6. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
7. Switching characteristics are independent of operating junction temperature.
0.085
0.130
5.0
405
200
55
12.5
16
50
35
Max
Unit
–
Vdc
–
mV/°C
1.0
µAdc
10
100
nAdc
–
–
0.100
0.160
–
Vdc
mV/°C
W
mhos
–
pF
–
–
25
ns
30
90
65
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