MJH11017_16 Datasheet, PDF (6/8 Pages) ON Semiconductor – Complementary Darlington Silicon Power Transistors

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
PNP
4.5
NPN
4.5
4.0 TJ = 25°C
3.5
4.0
T_J = 25°C
3.5
3.0
2.5
2.0
1.5
1.0
1.0
2.0 3.0 5.0
I_C = 15 A
I_C = 10 A
I_C = 5.0 A
10 20 30 50 100 200 300 500 1000
I_B, BASE CURRENT (mA)
3.0
I_C = 15 A
2.5
2.0
1.5
1.0
1.0
2.0 3.0 5.0
I_C = 10 A
I_C = 5.0 A
10 20 30 50 100 200 300 500 1000
I_B, BASE CURRENT (mA)
Figure 7. Collector Saturation Region
PNP
4.0
NPN
4.0
3.5
T_J = 25°C
3.5
T_J = 25°C
3.0
3.0
2.5
2.5
2.0
V_BE(sat) @ I_C/I_B = 100
2.0
V_BE(sat) @ I_C/I_B = 100
1.5
V_BE @ V_CE = 5.0 V
1.0
V_CE(sat) @ I_C/I_B = 100
0.5
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
20
I_C, COLLECTOR CURRENT (AMPS)
1.5
1.0
0.5
0.2
V_BE @ V_CE = 5.0 V
V_CE(sat) @ I_C/I_B = 100
0.5 0.7 1.0 2.0
5.0
10
20
I_C, COLLECTOR CURRENT (AMPS)
Figure 8. “On” Voltages
PNP
MJH11017
MJH11019
MJH11021
BASE
COLLECTOR
NPN
MJH11018
MJH11020
MJH11022
BASE
COLLECTOR
EMITTER
Figure 9. Darlington Schematic
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6
EMITTER