MJH11017_16 Datasheet, PDF (5/8 Pages) ON Semiconductor – Complementary Darlington Silicon Power Transistors

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
30
L = 200 mH
I_C/I_B1 ≥ 50
20 ^{TC = 100°C}
V_BE(off) = 0 - 5.0 V
R_BE = 47 W
DUTY CYCLE = 10%
10
MJH11017, MJH11018
MJH11019, MJH11020
MJH11021, MJH11022
0
0 20
60 100 140 180 220 260
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Maximum Rated Reverse Bias
Safe Operating Area (RBSOA)
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current conditions during
reverse biased turn−off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 5 gives RBSOA characteristics.
10,000
7000
5000
3000
2000
1000
V_CE = 5.0 V
T_C = 150°C
25°C
PNP
10,000
5000
V_CE = 5.0 V
2000
1000
NPN
T_C = 150°C
25°C
500
200
- 55°C
500
- 55°C
200
100
0.2 0.3
0.5 0.7 1.0
3.0 5.0
I_C, COLLECTOR CURRENT (AMPS)
10 15
100
0.2 0.3
Figure 6. DC Current Gain
0.5 0.7 1.0
3.0 5.0 7.0 10 15
I_C, COLLECTOR CURRENT (AMPS)
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