MJH11017_16 Datasheet, PDF (4/8 Pages) ON Semiconductor – Complementary Darlington Silicon Power Transistors

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
V_CC
-100 V
R_C
TUT
SCOPE
R_B & R_C varied to obtain desired current levels
D₁, must be fast recovery types, e.g.:
1N5825 used above I_B ≈ 100 mA
MSD6100 used below I_B ≈ 100 mA
V2
APPROX
+12 V
0
R_B
51 D₁
V1
APPROX
- 8.0 V
25 ms
+ 4.0 V
t_r, t_f ≤ 10 ns
Duty Cycle = 1.0%
For t_d and t_r, D₁ is disconnected
and V2 = 0
For NPN test circuit, reverse diode and voltage polarities.
Figure 2. Switching Times Test Circuit
1.0
0.7 _{D = 0.5}
0.5
0.3 _0.2
0.2
0.1
0.1 _0.05
0.07 _0.02
0.05
0.03
0.01
0.02 SINGLE PULSE
0.01
0.01 0.02 0.03 0.05 0.1
R_qJC(t) = r(t) R_qJC
R_qJC = 0.83°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t₁
T_J(pk) - T_C = P_(pk) R_qJC(t)
P_(pk)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10
t, TIME (ms)
20 30 50
Figure 3. Thermal Response
100 200 300 500 1000
T_C = 25°C SINGLE PULSE
30
20
0.1 ms
10
0.5 ms
5.0
1.0 ms
5.0 ms
2.0
dc
WIRE BOND LIMIT
1.0
THERMAL LIMIT
0.5
SECOND BREAKDOWN LIMIT
MJH11017, MJH11018
0.2
MJH11019, MJH11020
MJH11021, MJH11022
0
2.0 3.0 5.0 10 20 30 50 100 150 250
V_CE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 4. Maximum Rated Forward Bias
Safe Operating Area (FBSOA)
FORWARD BIAS
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I_C − V_CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 4 is based on T_J(pk) = 150_C; T_C is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T_J(pk)
v 150_C. T_J(pk) may be calculated from the data in
Figure 3. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
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