MJE13009 Datasheet, PDF (6/10 Pages) Motorola, Inc – 12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 100 WATTS

MJE13009
VOLTAGE REQUIREMENTS (continued)
In the four application examples (Table 2) load lines are
shown in relation to the pulsed forward and reverse biased
SOA curves.
In circuits A and D, inductive reactance is clamped by the
diodes shown. In circuits B and C the voltage is clamped by
the output rectifiers, however, the voltage induced in the pri-
mary leakage inductance is not clamped by these diodes and
could be large enough to destroy the device. A snubber net-
work or an additional clamp may be required to keep the
turn–off load line within the Reverse Bias SOA curve.
Load lines that fall within the pulsed forward biased SOA
curve during turn–on and within the reverse bias SOA curve
during turn–off are considered safe, with the following as-
sumptions:
(1) The device thermal limitations are not exceeded.
(2) The turn–on time does not exceed 10 µs (see standard
pulsed forward SOA curves in Figure 1).
(3) The base drive conditions are within the specified limits
shown on the Reverse Bias SOA curve (Figure 2).
CURRENT REQUIREMENTS
An efficient switching transistor must operate at the re-
quired current level with good fall time, high energy handling
capability and low saturation voltage. On this data sheet,
these parameters have been specified at 8 amperes which
represents typical design conditions for these devices. The
current drive requirements are usually dictated by the
VCE(sat) specification because the maximum saturation volt-
age is specified at a forced gain condition which must be du-
plicated or exceeded in the application to control the
saturation voltage.
SWITCHING REQUIREMENTS
In many switching applications, a major portion of the tran-
sistor power dissipation occurs during the fall time (tfi). For
this reason considerable effort is usually devoted to reducing
the fall time. The recommended way to accomplish this is to
reverse bias the base–emitter junction during turn–off. The
reverse biased switching characteristics for inductive loads
are discussed in Figure 11 and Table 3 and resistive loads in
Figures 13 and 14. Usually the inductive load component will
be the dominant factor in SWITCHMODE applications and
the inductive switching data will more closely represent the
device performance in actual application. The inductive
switching characteristics are derived from the same circuit
used to specify the reverse biased SOA curves, (See Table
1) providing correlation between test procedures and actual
use conditions.
RESISTIVE SWITCHING PERFORMANCE
1K
700
VCC = 125 V
IC/IB = 5
500
TJ = 25°C
2K
ts
1K
700
300
500
200
tr
300
VCC = 125 V
IC/IB = 5
TJ = 25°C
100
70
td @ VBE(off) = 5 V
50
0.2 0.3 0.5 0.7 1
2 3 5 7 10 20
IC, COLLECTOR CURRENT (AMP)
Figure 11. Turn–On Time
200
tf
100
0.2 0.3 0.5 0.7 1
2
5 7 10 20
IC, COLLECTOR CURRENT (AMP)
Figure 12. Turn–Off Time
IC
90% VCEM 90% IC ^Vclamp
tsv
trv
tfi
tti
Vclamp
IB
90% IB1
tc
10%
VCEM
10%
ICM
2%
IC
TIME
Figure 13. Inductive Switching Measurements
Motorola Bipolar Power Transistor Device Data
IC
VCE
IC
VCE
TIME 20 ns/DIV
Figure 14. Typical Inductive Switching Waveforms
(at 300 V and 12 A with IB1 = 2.4 A and VBE(off) = 5 V)
3–681