MJE13009 Datasheet, PDF (5/10 Pages) Motorola, Inc – 12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 100 WATTS

MJE13009
Table 1. Test Conditions for Dynamic Performance
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
5V
PW
DUTY CYCLE ≤ 10% ₆₈
tr, tf ≤ 10 ns
+5 V
0.001 µF
1N4933 ³³
MJE210
33 1N4933
2N2222
1k
RB
1k
IB
+5 V
VCC
L
IC
1N4933
NOTE
0.02 µF ²⁷⁰
PW and VCC Adjusted for Desired IC
RB Adjusted for Desired IB1
1k
2N2905
47 ₁₀₀
1/2 W
D.U.T.
MJE200
– VBE(off)
MR826*
Vclamp
*SELECTED FOR ≥ 1 kV
5.1 k
VCE
51
Coil Data:
Ferroxcube Core #6656
Full Bobbin (~16 Turns) #16
GAP for 200 µH/20 A
Lcoil = 200 µH
IC
ICM
t1
VCE
VCEM
TIME
OUTPUT WAVEFORMS
tf CLAMPED
tf UNCLAMPED ≈ t2
t
tf
t1 ADJUSTED TO
OBTAIN IC
t1 ≈
Lcoil (ICM)
VCC
Vclamp
t2
t2 ≈
Lcoil (ICM)
Vclamp
VCC = 20 V
Vclamp = 300 Vdc
Test Equipment
Scope–Tektronics
475 or Equivalent
RESISTIVE
SWITCHING
+125 V
RC
TUT
RB
SCOPE
D1
– 4.0 V
VCC = 125 V
RC = 15 Ω
D1 = 1N5820 or Equiv.
RB = Ω
+10 V
25 µs
0
–8 V
tr, tf < 10 ns
Duty Cycle = 1.0%
RB and RC adjusted
for desired IB and IC
APPLICATIONS INFORMATION FOR SWITCHMODE SPECIFICATIONS
INTRODUCTION
The primary considerations when selecting a power tran-
sistor for SWITCHMODE applications are voltage and cur-
rent ratings, switching speed, and energy handling capability.
In this section, these specifications will be discussed and re-
lated to the circuit examples illustrated in Table 2.(1)
VOLTAGE REQUIREMENTS
Both blocking voltage and sustaining voltage are important
in SWITCHMODE applications.
Circuits B and C in Table 2 illustrate applications that re-
quire high blocking voltage capability. In both circuits the
switching transistor is subjected to voltages substantially
higher than VCC after the device is completely off (see load
line diagrams at IC = Ileakage ≈ 0 in Table 2). The blocking ca-
pability at this point depends on the base to emitter condi-
tions and the device junction temperature. Since the highest
device capability occurs when the base to emitter junction is
reverse biased (VCEV), this is the recommended and speci-
fied use condition. Maximum ICEV at rated VCEV is specified
at a relatively low reverse bias (1.5 Volts) both at 25°C and
100_C. Increasing the reverse bias will give some improve-
ment in device blocking capability.
The sustaining or active region voltage requirements in
switching applications occur during turn–on and turn–off. If
the load contains a significant capacitive component, high
current and voltage can exist simultaneously during turn–on
and the pulsed forward bias SOA curves (Figure 1) are the
proper design limits.
For inductive loads, high voltage and current must be sus-
tained simultaneously during turn–off, in most cases, with the
base to emitter junction reverse biased. Under these condi-
tions the collector voltage must be held to a safe level at or
below a specific value of collector current. This can be ac-
complished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these de-
vices is specified as a Reverse Bias Safe Operating Area
(Figure 2) which represents voltage–current conditions that
can be sustained during reverse biased turn–off. This rating
is verified under clamped conditions so that the device is
never subjected to an avalanche mode.
(1) For detailed information on specific switching applications, see
Motorola Application Notes AN–719, AN–767.
3–680
Motorola Bipolar Power Transistor Device Data