MJE13009 Datasheet, PDF (4/10 Pages) Motorola, Inc – 12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 100 WATTS

50
30
TJ = 150°C
20
25°C
10
– 55°C
7
VCE = 5 V
5
0.2 0.3 0.5 0.7 1
2 3 5 7 10
20
IC, COLLECTOR CURRENT (AMP)
Figure 5. DC Current Gain
1.4
1.2
IC/IB = 3
TJ = – 55°C
1
0.8
25°C
150°C
0.6
0.4
0.2 0.3
0.5 0.7 1
23
5 7 10
20
IC, COLLECTOR CURRENT (AMP)
Figure 7. Base–Emitter Saturation Voltage
2
1.6
IC = 1 A
3A
1.2
MJE13009
5A
8A
12 A
0.8
0.4
TJ = 25°C
0
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1
IB, BASE CURRENT (AMP)
23 5
Figure 6. Collector Saturation Region
0.7
0.6
IC/IB = 3
TJ = 150°C
0.5
0.4
0.3
– 55°C
0.2
25°C
0.1
0
0.2 0.3 0.5 0.7 1
2 3 5 7 10
20
IC, COLLECTOR CURRENT (AMP)
Figure 8. Collector–Emitter Saturation Voltage
10K
VCE = 250 V
1K
TJ = 150°C
100
125°C
100°C
10
75°C
50°C
1
25°C
0.1
REVERSE
– 0.4
– 0.2
0
FORWARD
+ 0.2
+ 0.4
+ 0.6
VBE, BASE–EMITTER VOLTAGE (VOLTS)
Figure 9. Collector Cutoff Region
4K
2K
Cib
1K
TJ = 25°C
800
600
400
200
Cob
100
80
60
40
0.1 0.2 0.5 1 2 5 10 20 50 100 200 500
VR, REVERSE VOLTAGE (VOLTS)
Figure 10. Capacitance
Motorola Bipolar Power Transistor Device Data
3–679