MJE13009 Datasheet, PDF (3/10 Pages) Motorola, Inc – 12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 100 WATTS

MJE13009
100
50
20
10
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
5
1 ms
TC = 25°C
dc
THERMAL LIMIT
BONDING WIRE LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW RATED VCEO
10 µs
100 µs
7 10
20 30 50 70 100
200 300 500
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 1. Forward Bias Safe Operating Area
14
12
10
TC ≤ 100°C
8
IB1 = 2.5 A
6
VBE(off) = 9 V
4
5V
2
3V
0
1.5 V
0 100 200 300 400 500 600 700 800
VCEV, COLLECTOR–EMITTER CLAMP VOLTAGE (VOLTS)
Figure 2. Reverse Bias Switching Safe
Operating Area
The Safe Operating Area figures shown in Figures 1 and 2 are specified ratings for these devices under the test conditions shown.
1
SECOND BREAKDOWN
0.8
DERATING
0.6
THERMAL
0.4
DERATING
0.2
0
20 40
60
80
100 120
TC, CASE TEMPERATURE (°C)
140 160
Figure 3. Forward Bias Power Derating
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 1 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25_C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 1 may be found at any case tem-
perature by using the appropriate curve on Figure 3.
TJ(pk) may be calculated from the data in Figure 4. At high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations im-
posed by second breakdown. Use of reverse biased safe op-
erating area data (Figure 2) is discussed in the applications
information section.
1
0.7
0.5 ^{D = 0.5}
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.05
0.02
0.03
0.02 _0.01
0.01
0.01
SINGLE PULSE
0.02
0.05 0.1
Z_θJC(t) = r(t) R_θJC
R_θJC = 1.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) Z_θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.2
0.5
1
2
5
10
20
t, TIME (ms)
50 100 200
500 1.0 k
Figure 4. Typical Thermal Response [Z_θJC(t)]
3–678
Motorola Bipolar Power Transistor Device Data