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BDW42G Datasheet, PDF (6/7 Pages) ON Semiconductor – Darlington Complementary Silicon Power Transistors
BDW42G (NPN), BDW46G, BDW47G (PNP)
BDW42 (NPN)
BDW46, 47 (PNP)
+ 5.0
+ 5.0
+ 4.0
*IC/IB v 250
+ 3.0
+ 2.0
25°C to 150°C
+ 4.0
*IC/IB v 250
+ 3.0
+ 2.0
+ 25°C to 150°C
+ 1.0
+ 1.0
- 55°C to 25°C
0
0
- 1.0
*qVC for VCE(sat)
- 2.0
- 3.0
qVB for VBE
- 4.0
25°C to 150°C
- 55°C to 25°C
- 1.0
*qVC for VCE(sat)
- 2.0
- 3.0
qVB for VBE
- 55°C to + 25°C
+ 25°C to 150°C
- 4.0
- 55°C to +25°C
- 5.0
- 5.0
0.1 0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
0.1 0.2 0.3 0.5
1.0 2.0 3.0 5.0
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IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 12. Temperature Coefficients
105
REVERSE
104
VCE = 30 V
103
FORWARD
105
REVERSE
104
VCE = 30 V
103
FORWARD
102
TJ = 150°C
101
102
TJ = 150°C
101
100°C
100
25°C
10- 1
+ 0.6 + 0.4 + 0.2 0 - 0.2 - 0.4 - 0.6 - 0.8 - 1.0 - 1.2 - 1.4
100
100°C
25°C
10- 1
- 0.6 - 0.4 - 0.2
0 + 0.2 + 0.4 + 0.6 + 0.8 + 1.0 + 1.2 + 1.4
VBE, BASE-EMITTER VOLTAGE (VOLTS)
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 13. Collector Cut−Off Region
NPN
BDW42
COLLECTOR
BASE
[ 8.0 k [ 60
PNP
BDW46
BDW47
COLLECTOR
BASE
[ 8.0 k [ 60
EMITTER
Figure 14. Darlington Schematic
EMITTER
www.onsemi.com
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