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| BDW42G Datasheet, PDF (2/7 Pages) ON Semiconductor – Darlington Complementary Silicon Power Transistors | |||
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BDW42G (NPN), BDW46G, BDW47G (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0)
BDW46
VCEO(sus)
80
BDW42/BDW47
100
Vdc
â
â
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
BDW46
BDW42/BDW47
BDW46
BDW42/BDW47
ICEO
ICBO
IEBO
mAdc
â
2.0
â
2.0
mAdc
â
1.0
â
1.0
â
2.0
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 5.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
CollectorâEmitter Saturation Voltage
(IC = 5.0 Adc, IB = 10 mAdc)
(IC = 10 Adc, IB = 50 mAdc)
BaseâEmitter On Voltage
(IC = 10 Adc, VCE = 4.0 Vdc)
hFE
1000
â
250
â
VCE(sat)
â
â
Vdc
2.0
3.0
VBE(on)
â
3.0
Vdc
SECOND BREAKDOWN (Note 2)
Second Breakdown Collector
Current with Base Forward Biased
BDW42
BDW46/BDW47
IS/b
VCE = 28.4 Vdc
VCE = 40 Vdc
VCE = 22.5 Vdc
VCE = 36 Vdc
Adc
3.0
â
1.2
â
3.8
â
1.2
â
DYNAMIC CHARACTERISTICS
Magnitude of common emitter small signal short circuit current transfer ratio
fT
(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
BDW42
BDW46/BDW47
4.0
â
MHz
pF
â
200
â
300
SmallâSignal Current Gain
(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
hfe
300
â
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
2. Pulse Test non repetitive: Pulse Width = 250 ms.
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