BDW42G Datasheet, PDF (5/7 Pages) ON Semiconductor – Darlington Complementary Silicon Power Transistors

BDW42G (NPN), BDW46G, BDW47G (PNP)
BDW42 (NPN)
BDW46, 47 (PNP)
20,000
10,000
5000 _{TJ = 150°C}
3000
2000
25°C
1000
- 55°C
500
300
200
0.1
0.2 0.3 0.5 0.7 1.0
V_CE = 3.0 V
20,000
10,000
7000
5000
3000
2000
T_J = 150°C
25°C
2.0 3.0 5.0 7.0 10
1000
700
500
300
200
0.1
- 55°C
0.2 0.3 0.5 0.7 1.0
V_CE = 3.0 V
2.0 3.0 5.0 7.0 10
I_C, COLLECTOR CURRENT (AMP)
Figure 9. DC Current Gain
I_C, COLLECTOR CURRENT (AMP)
3.0
2.6
I_C = 2.0 A 4.0 A
6.0 A
2.2
1.8
T_J = 25°C
3.0
T_J = 25°C
2.6
I_C = 2.0 A
4.0 A
6.0 A
2.2
1.8
1.4
1.4
1.0
0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
I_B, BASE CURRENT (mA)
20 30
1.0
0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
I_B, BASE CURRENT (mA)
Figure 10. Collector Saturation Region
20 30
3.0
T_J = 25°C
2.5
3.0
T_J = 25°C
2.5
2.0
2.0
1.5
V_BE(sat) @ I_C/I_B = 250
1.5 VBE @ VCE = 4.0 V
V_BE @ V_CE = 4.0 V
1.0
V_CE(sat) @ I_C/I_B = 250
0.5
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0
I_C, COLLECTOR CURRENT (AMP)
5.0 7.0 10
1.0 ^{VBE(sat) @ IC/IB = 250}
0.5
0.1
V_CE(sat) @ I_C/I_B = 250
0.2 0.3 0.5 0.7 1.0
2.0 3.0
I_C, COLLECTOR CURRENT (AMP)
5.0 7.0 10
Figure 11. “On” Voltages
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