BDW42G Datasheet, PDF (3/7 Pages) ON Semiconductor – Darlington Complementary Silicon Power Transistors

BDW42G (NPN), BDW46G, BDW47G (PNP)
90
80
70
60
50
40
30
20
10
0
25
50
75
100
125 150
T_C, CASE TEMPERATURE (°C)
Figure 1. Power Temperature Derating Curve
R_B AND R_C VARIED TO OBTAIN DESIRED CURRENT LEVELS
D₁ MUST BE FAST RECOVERY TYPES, e.g.:
 1N5825 USED ABOVE I_B [ 100 mA
 MSD6100 USED BELOW I_B [ 100 mA
TUT
V_CC
- 30 V
R_C
SCOPE
V₂
R_B
APPROX
+ 8.0 V
0
51 D1
[ 8.0 k [ 150
V₁
APPROX
- 12 V
25 ms
t_r, t_f v 10 ns
DUTY CYCLE = 1.0%
+ 4.0 V
for t_d and t_r, D₁ id disconnected
and V₂ = 0
For NPN test circuit reverse all polarities
Figure 2. Switching Times Test Circuit
5.0
3.0
t_s
2.0
BDW46, 47 (PNP)
BDW42 (NPN)
1.0
t_f
0.7
0.5
0.3
0.2 _{VCC = 30 V}
I_C/I_B = 250
0.1 I_B1 = I_B2
0.07 _{TJ = 25°C}
0.05
0.1
0.2 0.3
t_r
t_d @ V_BE(off) = 0 V
0.5 0.7 1.0
2.0 3.0
I_C, COLLECTOR CURRENT (AMP)
Figure 3. Switching Times
5.0 7.0 10
1.0
0.7 _{D = 0.5}
0.5
0.3
0.2
0.2
0.1
0.1
0.05
0.07
0.02
0.05
0.03
SINGLE PULSE
0.02
0.01
0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5
P_(pk)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
R_qJC(t) = r(t) R_qJC
R_qJC = 1.92°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t₁
T_J(pk) - T_C = P_(pk) R_qJC(t)
1.0 2.0 3.0 5.0 10
t, TIME OR PULSE WIDTH (ms)
20 30 50 100 200 300 500 1000
Figure 4. Thermal Response
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