2N6284_06 Datasheet, PDF (6/7 Pages) ON Semiconductor – Darlington Complementary Silicon Power Transistors

2N6283 2N6284 2N6286 2N6287
NPN
2N6284
PNP
2N6287
+5.0
+5.0
+4.0
+3.0
*APPLIES FOR I_C/I_B ≤
hFE @ VCE + 3.0 V
250
+4.0
+3.0
*APPLIES FOR I_C/I_B ≤
hFE @ VCE + 3.0 V
250
+2.0
25°C to 150°C
+2.0
+1.0
+1.0
0
−55 °C to + 25°C
0
25°C to 150°C
−55 °C to + 25°C
−1.0
*θV_C for V_CE(sat)
−2.0
−3.0 _{θVB for VBE}
25°C to + 150°C
−4.0
−5.0
0.2 0.3 0.5 0.7 1.0
2.0 3.0
−55 °C to + 25°C
5.0 7.0 10
20
−1.0 *θV_C for V_CE(sat)
−2.0
25°C to + 150°C
−3.0 _{θVB for VBE}
−4.0
−5.0
0.2 0.3 0.5 0.7 1.0
2.0 3.0
−55 °C to + 25°C
5.0 7.0 10
20
I_C, COLLECTOR CURRENT (AMP)
I_C, COLLECTOR CURRENT (AMP)
Figure 11. Temperature Coefficients
10⁵
10³
10⁴
V_CE = 30 V
10³
T_J = 150°C
10²
100°C
V_CE = 30 V
10²
T_J = 150°C
10¹
10⁰
100°C
10¹
REVERSE
FORWARD
10⁰
25°C
10^−1
−0.6 −0.4 −0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2 + 1.4
10^−1
REVERSE
10^−2
25°C
FORWARD
10^−3
+0.6 +0.4 +0.2 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4
V_BE, BASE−EMITTER VOLTAGE (VOLTS)
V_BE, BASE−EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut−Off Region
NPN
2N6284
COLLECTOR
BASE
[ 8.0 k [ 60
PNP
2N6287
COLLECTOR
BASE
[ 8.0 k [ 60
EMITTER
Figure 13. Darlington Schematic
EMITTER
http://onsemi.com
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