2N6284_06 Datasheet, PDF (3/7 Pages) ON Semiconductor – Darlington Complementary Silicon Power Transistors

2N6283 2N6284 2N6286 2N6287
10
R_B & R_C VARIED TO OBTAIN DESIRED CURRENT LEVELS
V_CC
− 30 V
7.0
t_s
5.0
D₁ MUST BE FAST RECOVERY TYPE e.g.,
1N5825 USED ABOVE I_B [ 100 mA
MSD6100 USED BELOW I_B [ 100 mA
R_C
3.0
SCOPE _2.0
TUT
V₂
R_B
1.0
2N6284 (NPN)
2N6287 (PNP)
t_f
t_r
APPROX
0.7
+ 8.0 V
0
51 D1
[ 8.0 k [ 50
0.5
0.3 ^{VCC = 30 Vdc}
V₁
+ 4.0 V
0.2 ^{IC/IB = 250}
APPROX
− 12 V
25 μs
t_r, t_f v 10 ns
DUTY CYCLE = 1.0%
FOR t_d AND t_r, D₁ IS DISCONNECTED
AND V₂ = 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES
I_B1 = I_B2
0.1 ^{TJ = 25°C}
0.2 0.3 0.5 0.7 1.0
t_d @ V_BE(off) = 0 V
2.0 3.0 5.0 7.0 10
20
I_C, COLLECTOR CURRENT (AMP)
Figure 2. Switching Times Test Circuit
Figure 3. Switching Times
1.0
0.7 _{D = 0.5}
0.5
0.3
0.2
0.2
0.1
0.1 0.05
0.07
0.02
0.05
0.03
0.01
0.02
SINGLE PULSE
0.01
0.01 0.02 0.03 0.05 0.1
R_θJC(t) = r(t) R_θJC
P_(pk)
R_θJC = 1.09°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t₁
T_J(pk) − T_C = P_(pk) R_θJC(t)
t₁
t₂
DUTY CYCLE, D = t₁/t₂
0.2 0.3 0.5
1.0 2.0 3.0 5.0 10
t, TIME OR PULSE WIDTH (ms)
20 30 50
Figure 4. Thermal Response
100 200 300 500 1000
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